A global partner for functional ceramic parts and
structural ceramic parts for semiconductor equipment
Features
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Best quality in terms of client satisfaction
- ISO 9001, 14001, 27000, 45001
- Owning a large 3D measurement device (4000x1600) with a 300mm Zygo interferometer
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System for batch manufacturing of ceramic parts
- Owning all raw ingredients, materials, and processing facilities and procedures for ceramic manufacturing
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Manufacturing of functional parts
- ESC, AlN Heater, pBN High-temperature ESC, Pulse Heater, Wafer Table
- Customer-specific products (design simulation, production, test)
Electrostatic Chuck (ESC)
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High-quality ceramic materials are manufactured by hot press sintering
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Technology for ESC repair
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Ultra-precise surface shape control technology
Please check by moving to the left and the right.
정전척(ESC) 테이블
정전척(ESC)
Item |
Unit |
AW100H |
AS250H |
Color
|
-
|
Right gray
|
Black
|
Relative density
|
%
|
≥ 99.7
|
≥ 99.0
|
Dielectric constant (1MHz)
|
F/m
|
10.5
|
11
|
Dielectric loss (1MHz)
|
-
|
2 X 10-3
|
2 X 10-3
|
Volume resistivity
|
RT
|
Ω•cm
|
2 X 1016
|
1 X 1016
|
Bending strength
|
MPa
|
≥ 500
|
≥ 500
|
Vickers hardness
|
HV
|
≥ 1800
|
≥ 2100
|
Thermocompression bonding heater
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Design and production of heating wires enabling rapid heating and fast cooling
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Composition control allows for the production of AlN ceramic sintered bodies with high density and high thermal conductivity.
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High flatness and parallelism can be achieved using ultra-precision processing techniques.
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Thermocompression bonding heater table
Thermocompression bonding heater
Properties |
Single-Zone |
Multi-Zone |
Use Temperature (℃)
|
>400℃
|
>400℃
|
Heating Rate (℃/sec)
|
200
|
40
|
Cooling Rate (℃/sec)
|
100
|
10
|
Thermal Conductivity (W/m·K)
|
200
|
200
|
Uniformity (@400℃)
|
<3℃
|
<10℃
|
Size (mm)
|
12, 16, 22
|
50, 60, 70, 120
|
AlN heater
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Multi-zone design and production with consistent temperature density
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Sintering of high-density and high-quality AlN composite ceramics
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Volume resistive materials are realized for each process, including high-temperature processes above 650 °C.
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Suppression of heat wire resistance for homogeneous temperature range
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Leakage current reduction between RF-heaters for high-power plasma application
Please check by moving to the left and the right.
AlN heater table
AlN heater
Properties |
A450 |
A550 |
A650 |
Density (g/㎤)
|
RT |
3.3
|
3.3
|
3.3
|
Volume Resistivity (Ω∙㎝)
|
RT |
E+14
|
E+15
|
E+15
|
Thermal conductivity (W/m∙k)
|
RT |
170
|
95
|
70
|
Coefficient of thermal expansion ( x 10-6/K)
|
RT-800 ℃ |
5.4
|
5.3
|
5.3
|
Semiconductor/OLED Process Components
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Densification: Improving density, strength, and plasma resistance
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YAG material manufacturing technology: YAG single phase excluding Al₂O₃ or YAM
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Excellent plasma resistance compared to Al₂O₃
Please check by moving to the left and the right.
Semiconductor/OLED Process Components table
Semiconductor/OLED Process Components
Division |
Al₂O₃ |
Y₂O₃ |
YAG |
Strength
|
|
|
|
Plasma resistance
|
|
|
|
Price
|
|
|
|
-
Al₂O₃
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Y₂O₃
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SiC
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AlN
-
Si₃N₄
-
BN
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YAG
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ZrO2